LSK389-B-71 [Linear Systems]
ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET; 超低噪声单片双N沟道JFET型号: | LSK389-B-71 |
厂家: | Linear Systems |
描述: | ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET |
文件: | 总2页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
en = 0.9nV/√Hz (typ)
|VGS1-2| = 20mV max
BVGSS = 40V max
Yfs = 20mS (typ)
25pF typ
TO-71
BOTTOM VIEW
LOW CAPACITANCE
SOIC-A
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
1
2
3
4
8
7
6
5
S1
D1
SS
G1
G2
SS
D2
S2
3
1
5
7
G1
D1
S1
S2
2
6
D2
G2
Maximum Temperatures
Storage Temperature
-65 to +150 °C
-55 to +135 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
400mW
Gate Forward Current
IG(F) = 10mA
Maximum Voltages
*For equivalent single version, see LSK170 family.
Gate to Source
Gate to Drain
VGSS = 40V
VGDS = 40V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNIT
CONDITIONS
Differential Gate to Source Cutoff
Voltage
V
GS1 − VGS2
20
mV
-
VDS = 10V, ID = 1mA
I
DSS1
Gate to Source Saturation Current Ratio 0.9
VDS = 10V, VGS = 0V
I
DSS2
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BVGSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
40
0.15
2.6
6
V
V
VDS = 0, ID = 100µA
VGS(OFF)
2
VDS = 10V, ID = 0.1µA
LSK389A
6.5
12
Drain to Source Saturation
Current
IDSS
mA
pA
VDS = 10V, VGS = 0
VGS = -30V, VDS = 0
LSK389B
LSK389C
10
20
IGSS
Gate to Source Leakage Current
200
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
V
DS = 10V, VGS = 0, IDSS = 3mA,
Yfs
Full Conduction Transconductance
8
20
0.9
2.5
mS
f = 1kHz
V
DS = 10V, ID = 2mA, f = 1kHz,
NBW = 1Hz
DS = 10V, ID = 2mA, f = 10Hz,
en
en
Noise Voltage
Noise Voltage
1.9 nV/√Hz
V
4
nV/√Hz
NBW = 1Hz
CISS
Common Source Input Capacitance
25
pF
pF
VDS = 10V, VGS = 0, f = 1MHz,
VDG = 10V, ID = 0, f = 1MHz,
CRSS
Common Source Reverse Transfer Cap.
5.5
ORDERING INFORMATION
LSK389 - A - SOIC-8
IDSS Range
Package
TO-71 6L
A 2.6 - 6.5 mA
B 6 - 12 mA
C 10 - 20 mA
71
SOIC-8 SOIC-A 8L
PACKAGE DIMENSIONS
SOIC
TO-71
Six Lead
0.014
0.018
1
2
3
4
8
0.230
0.050
DIA.
0.195
0.175
0.209
7
DIA.
0.189
0.196
6
0.030
MAX.
0.021
0.150
0.115
5
0.150
0.157
6 LEADS
0.0040
0.0098
0.500 MIN.
0.050
0.019
DIA.
0.016
0.0075
0.0098
0.2284
0.2440
0.100
DIMENSIONS IN
INCHES
3
7
2
1
5
6
45°
0.046
0.036
0.048
0.028
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Revised 07 December
2005.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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